Advancing Semiconductor Performance: An Effective and Cost-Efficient Breakthrough

The semiconductor industry is the backbone of modern technology, powering everything from smartphones to medical devices. To tackle these opportunities, the chip industry makes significant capital investments to build new fabs and facilities or expand existing premises – Only in 2024, billions and billions of dollars werepoured into more than one hundred new investments. Yet, as the industry continues to innovate, manufacturers face challenges in improving product performance without increasing costs. A groundbreaking low-temperature silicon oxide passivation method (LT-UHV) (What we offer) offers a solution that is both cost-effective and efficient.

The challenge: Balancing innovation and cost

The interface between silicon (Si) and silicon oxide (SiOx) is present is most of semiconductor devices, but defects at the SiOx /Si interface can degrade product performance. Historically, addressing these defects required high-temperature processes (>700 °C) that:

• Increase manufacturing costs due to high energy use.

• Complicate production by limiting compatibility with high temperature-sensitive materials like metals and polymers.

• Heighten the risk of contamination and product variability.

To stay competitive, manufacturers need innovative methods to improve performance without these drawbacks.

The SisuSemi solution: A smarter approach

The new LT-UHV method operates below 450 °C, making it ideal for modern semiconductor manufacturing. It simplifies the production process while delivering tangible benefits:

1. Cost-efficient pre-treatment

• Simplified Cleaning: Removes contaminants without high-temperature annealing.

• Enhanced Efficiency: Improves material quality through precise, low-temperature heating.

2. Advanced interface engineering

• Introduces oxygen atoms at low temperatures to create a crystalline SiOx layer. This innovation minimizes defects that disrupt performance.

3. Post-treatment compatibility

• Can be applied also to completed components, reducing electrical losses in devices like photodiodes and sensors.

Key benefits for manufacturers

Improved device performance

The SisuSemi technology significantly reduces defect densities, enhancing reliability and efficiency in electronic and photonic devices.

Cost savings

By eliminating the need for energy-intensive high-temperature processes, this method reduces operational costs and energy consumption.

Sustainability

Lower energy requirements align with green manufacturing goals, appealing to environmentally conscious markets.

Scalability

The method integrates seamlessly into existing production workflows, ensuring manufacturers can adopt it without major disruptions.

Real-world impact

Electronics

Manufacturers can create more efficient transistors and capacitors, enabling smaller and more powerful devices.

Photonics and sensors

Improved material quality enhances applications in medical imaging, telecommunications, and environmental monitoring.

Consumer appeal

Products that are more reliable and energy-efficient strengthen brand reputation and customer trust.

Looking ahead

The SisuSemi method (Contact us) not only solves today’s challenges but also lays the groundwork for future advancements. As research continues, expect further improvements in scalability and compatibility, unlocking new opportunities in nanotechnology and advanced materials.

Conclusion

This breakthrough in low-temperature passivation represents a turning point for the semiconductor industry. By offering a practical, cost-efficient, and sustainable solution, LT-UHV empowers manufacturers to innovate while maintaining profitability. As demand for high-performance, eco-friendly devices grows, this method positions manufacturers at the forefront of the industry’s future.