Case studies

The challenge was to improve the performance and reliability of MOSCap (Metal-Oxide-Semiconductor Capacitor) structures, utilized in memory, logic and sensor chips. A key issue was the high interface defect density (Dit) at the Si/Al₂O₃ interface, leading to increased leakage current and limiting overall device efficiency. The current state-of-the-art approach—using chemically grown silicon oxide—was not seen to deliver the level of cleanliness needed to enhance chip performance at advanced process nodes.

Sisusemi’s advanced surface treatment technology was applied to the MOSCap wafers. This cutting-edge solution was specifically designed to optimize the oxide interface, targeting atomic-scale impurities and defects to improve electrical performance and long-term stability.

Following the application of Sisusemi’s solution, the manufacturer observed dramatic performance improvements:
✅ 42% reduction in interface defect density (Dit), leading to improved charge carrier mobility and reduced energy losses.
✅ 67% reduction in leakage current, enhancing power efficiency and device reliability.
✅ Structural transformation of amorphous silicon oxide into a crystalline structure, as confirmed by STEM (Scanning Transmission Electron Microscopy) imaging, improving the overall stability of the Si/Al₂O₃ interface and enabling superior electrical characteristics

These results made it possible to reach higher manufacturing yield, improved device longevity, and enhanced performance in memory, logic chips, and sensors. By adopting Sisusemi’s technology, it is possible to successfully reduce defect density and improve energy efficiency, ensuring that the treated chips meet the highest industry standards.

A leading manufacturer of photo detectors for light detection applications faced leakage current issues in their components. High leakage current reduced sensitivity and signal accuracy, affecting overall detector performance. Traditional methods failed to achieve the necessary reduction without compromising other device characteristics.

Sisusemi’s advanced surface treatment technology was applied diced components, targeting atomic-level impurities and interface defects that contributed to leakage current.

Following the application of Sisusemi’s solution, it was observed:
✅ 50% reduction in leakage current, significantly improving detection accuracy.
✅ Enhanced device efficiency and reliability, ensuring better light sensitivity.

With Sisusemi’s atomic-level impurity reduction technology, higher-performance photo detectors with lower noise and greater precision were achieved.

Particle detectors for satellites and nuclear power plants faced high leakage current in their p-n diode structures, compromising detection accuracy and long-term reliability in harsh environments. Existing solutions failed to meet the stringent performance requirements for extreme radiation conditions.

Sisusemi’s advanced surface treatment technology was applied to diced p-n diode components, targeting atomic-level defects and contamination responsible for excessive leakage current.

Following the implementation of Sisusemi’s solution, the following results were achieved:
✅ 75% reduction in leakage current, ensuring higher sensitivity and stability.
✅ Improved radiation hardness, extending detector lifespan in extreme conditions.

With Sisusemi’s atomic-level cleaning technology, it was possible to introduce next-generation particle detectors with enhanced efficiency, reliability, and operational longevity in space and nuclear applications.

A solar cell manufacturer sought to improve energy conversion efficiency by increasing minority carrier lifetime, a key factor in maximizing power output. Existing surface treatment methods left impurities that limited carrier lifetime, reducing overall cell performance.

Sisusemi’s advanced surface treatment technology was applied to wafers, targeting atomic-level impurities that cause recombination losses.

Following the application of Sisusemi’s solution, it was possible to achieve:
✅ Up to 166% increase in minority carrier lifetime, significantly improving charge collection efficiency.
✅ Enhanced solar cell performance, leading to higher power output and greater energy yield.

With Sisusemi’s innovative atomic-level cleaning technology, more efficient solar cells were made possible, thus enabling improved competitiveness in the renewable energy market and supporting the transition to sustainable energy solutions.