What we offer

The fabrication of semiconductors is a complex process involving multiple stages, from deposition and etching to lithography and ion implantation. Each step in the process has strict cleanliness requirements. Even a minute particle, down to the atomic level, can cause defects that lead to significant performance degradation, yield decreases, or even total failure of the semiconductor device. As device architectures continue to shrink, with nodes moving to 3 nm and below, traditional cleaning methods are no longer sufficient. SisuSemi addresses these challenges, ensuring that every surface within a semiconductor wafer is free from contaminants that could compromise functionality.

The SisuSemi process uses Ultra High Vacuum (UHV), elevated temperature (< 450 °C) and controlled oxidation to clean the silicon surface, restore the crystalline structure to the surface atoms and form a very thin crystalline SiO2 layer to protect the silicon surface and enhance further processing. Traditionally silicon-based semiconductor manufacturing has not used UHV, so the SisuSemi soluteion is the real game-changer to enable atom-level cleanliness.

Below you can find basic images how SisuSemi process works together with Transmission Electron Microscope (TEM) images showing a high quality Si-SiO2 interface with SisuSemi solution.

Transmission Electron Microscope (TEM) image of a SisuSemi treated interface on Si wafer.

At top, Al2O3. Grown post SisuSemi process.

Between Green lines, (Al2O3 -) SiO2 - Si- interface.

At bottom bulk crystalline Si.

Zoom in for Transmission Electron Microscope (TEM) image of a SisuSemi treated interface on Si wafer.

SISUSEMI novel crystalline silicon oxide in the interface imaged with a TEM, visible as sharp white line with thickness around 1 nm.

Si wafer surface after the-state-of-the-art cleaning processes. It includes contaminant atoms (hydrogen and carbon), and disordered silicon oxide on the surface that include defects in crystalline structure.

Si wafer surface after the-state-of-the-art cleaning processes. It includes contaminant atoms (hydrogen and carbon), and disordered silicon oxide on the surface that include defects in crystalline structure. 

Sisusemi treatment at elevated temperature (below 450 °C) in ultra-high vacuum with controlled oxygen flow.
Same Si surface after applying SisuSemi technology. Contaminant atoms (hydrogen and carbon) are removed, and disordered surface has changed to an ordered and defect-free silicon oxide surface.

Sisusemi treatment at elevated temperature (below 450 °C) in ultra-high vacuum with controlled oxygen flow. 

Same Si surface after applying SisuSemi technology. Contaminant atoms (hydrogen and carbon) are removed, and disordered surface has changed to an ordered and defect-free silicon oxide surface. 

The SisuSemi technology is protected with extensive global patent portfolio.