Atomic-Level Cleanliness in ALD: Overcoming Impurity Challenges for High-Performance, Energy-Efficient and Reliable Semiconductor Manufacturing

Abstract / Summary:

Atomic Layer Deposition (ALD) has become a foundational technology in the semiconductor industry, enabling the precise, conformal deposition of ultra thin films essential for advanced logic, memory, power, RF and photonic devices. As device dimensions shrink and architectures become more complex, the control of atomic-level impurities prior and during ALD processes has emerged as a critical determinant of device performance, yield and long-term reliability [1] [2]. Even very low contamination levels of carbon and metallic residues together with uncontrolled incorporation of hydrogen and oxygen on the surface  can introduce interface defect states and mid-gap traps, increase leakage current, degrade the ALD film adhesion and ultimately reduce device manufacturing yield, reliability and performance [1]. The industry’s relentless drive toward device miniaturization and increased component density has placed unparalleled demands on thin film quality and interface engineering, making atomic-level cleanliness not just a process optimization, but a fundamental enabler for the next generation of electronic, photonic and sensing devices [1].

Despite the inherent advantages of ALD—such as excellent step coverage and atomic-scale thickness control—persistent challenges related to interface contamination, defect generation and uncontrolled oxidation threaten to undermine the full potential of this technology. In this context, SisuSemi’s atomic-level solution for removing contaminants and defects stands out as a transformative and enabling approach, directly addressing the most pressing reliability and performance bottlenecks in ALD-enabled device manufacturing. This is the focus of the white paper.

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