The Multi-Million Euro “Dirt” Problem: Why Atomic-Level Purity is the New Business Critical for GAA
In the race toward sub-3nm nodes, Gate-All-Around (GAA) is the undeniable future. It offers superior electrostatic control and the scalability required to keep Moore’s Law alive. Yet, for manufacturing leaders, GAA presents a paradox: the very architecture that drives performance also introduces a new frontier of vulnerability—atomic-level defects. As we transition from FinFET to GAA … Read more